Related papers: GaN-based Bipolar Cascade Lasers with 25nm wide Qu…
We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system. Comparisons between…
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon…
By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic…
We report gain calculations for a quantum cascade laser using a fully self-consistent quantum mechanical approach based on the theory of nonequilibrium Green functions. Both the absolute value of the gain as well as the spectral position at…
Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along…
We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with…
A novel class of coherent nonlinear optical phenomena, involving induced transparency in quantum wells, is considered in the context of a particular application to sensitive long-wavelength infrared detection. It is shown that the strongest…
A quantum theory of spectral parameters and oscillator strengths of quantum transitions in an active region, which contains cascades of wide quantum wells with a complicated potential profile is developed. A new spatial design of the…
A laser can be understood as thermodynamic engine converting heat to a coherent single mode field close to Carnot efficiency. From this perspective spectral shaping of the excitation light generates a higher effective temperature on the…
We study the coherent dynamics of localized excitons in 100-periods of 2.5 nm thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the…
Within the framework of fractional quantum mechanics, an exact solution has been found for the energy spectrum of a quantum particle confined in a quantum well - a symmetric one-dimensional finite potential well. A simple graphical…
We consider the energy spectrum of the planar quantum well which consisted of two ribbons of narrow-gap semiconductors and a graphene ribbon between ones. It is shown that the gapless mode appears only in case of inverted narrow-gap…
Portable mid-infrared (mid-IR) spectroscopy and sensing applications require widely tunable, narrow linewidth, chip-scale, single-mode sources without sacrificing significant output power. However, no such lasers have been demonstrated…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
We explore two parabolic quantum well (PQW) samples, with and without Bragg mirrors, in order to optimise the building blocks of a Bosonic Cascade Laser. The photoluminescence spectra of a PQW microcavity sample is compared against that of…
We study quantum coherence of strongly interacting cold bosons in a double-well potential driven by a laser field. The system is initially in a Fock state and, for either with or without a static tilting field, evolves into the coherent…
Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with increasing QW depth (x). Time-resolved differential…
We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and…
The photocurrent and the small-signal photoconductance of InGaN/GaN multiple-quantum-well structures were studied at the temperature range from 10 to 300 K. The optical excitation was carried out at the quantum wells intrinsic absorption…
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy,…