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A custom-built and precisely controlled quantum system may offer access to a fundamental understanding of another, less accessible system of interest. A universal quantum computer is currently out of reach, but an analog quantum simulator…
The optical properties of ZnO quantum wells, which have potential application of short-wavelength semiconductor laser utilizing a high-density excitonic effect, were investigated. Stimulated emission of excitons was observed at temperatures…
Modelocked lasers operating at 2-3 um wavelength region are interesting for various spectroscopic applications. To this end, GaSb-based semiconductor saturable absorber mirrors (SESAMs) are developing fast as a practical technology for…
Semiconductor colloidal quantum wells (CQWs) make an exciting quasi-2D class of nanocrystals thanks to their unique properties including their highly anisotropic optical transition dipole moment (TDM). Thus, employing a film of CQWs with…
A new mechanism for exciton lasing in ZnSe/ZnCdSe quantum wells is proposed. Lasing, occurring below the lowest exciton line, may be associated with a BCS-like condensed (coherent) exciton state. This state is most stable at low…
Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of…
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long…
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs,…
High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs based on bulk InGaN active region were demonstrated. The…
We revisit the problem of laser-induced suppression of quantum dynamical tunneling in a model system studied by Kilin et al. [Phys. Rev. Lett. 76 (1996) 3297]. This quantum system consists of a ground state symmetric double-well potential…
The large magnification factors of gravitationally lensed (GL) systems allow us to investigate the properties of quasars with X-ray luminosities that are substantially lower than those of unlensed ones and also provide an independent means…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two…
The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of…
We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional…
In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed…
The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions…
The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more…
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
We present a computer simulation of exciton-exciton scattering in a quantum well. Specifically, we use quantum Monte Carlo techniques to study the bound and continuum states of two excitons in a 10 nm wide GaAs/Al$_{0.3}$Ga$_{0.7}$As…