Images of edge current in InAs/GaSb quantum wells

Eric M. Spanton; Katja C. Nowack; Lingjie Du; Gerard Sullivan; Rui-Rui Du; Kathryn A. Moler

doi:10.1103/PhysRevLett.113.026804

Images of edge current in InAs/GaSb quantum wells

Mesoscale and Nanoscale Physics 2014-07-14 v2

Authors: Eric M. Spanton , Katja C. Nowack , Lingjie Du , Gerard Sullivan , Rui-Rui Du , Kathryn A. Moler

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Abstract

Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than $h/e^2$ , it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature-independent.

Keywords

quantum spin Hall effect edge current InAs/GaSb quantum wells edge resistance ballistic transport temperature independence scattering mechanisms

Cite

@article{arxiv.1401.1531,
  title  = {Images of edge current in InAs/GaSb quantum wells},
  author = {Eric M. Spanton and Katja C. Nowack and Lingjie Du and Gerard Sullivan and Rui-Rui Du and Kathryn A. Moler},
  journal= {arXiv preprint arXiv:1401.1531},
  year   = {2014}
}

Comments

Version accepted to Physical Review Letters (http://prl.aps.org/). 12 pages, 3 figures. Supplementary Online Materials available at http://stanford.edu/group/moler/papers/Spanton_InAsGaSb_imaging_SI_v2.pdf

Images of edge current in InAs/GaSb quantum wells

Abstract

Keywords

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