We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width.
@article{arxiv.cond-mat/0208265,
title = {Characterization of one-dimensional quantum channels in InAs/AlSb},
author = {C. H. Yang and M. J. Yang and K. A. Cheng and J. C. Culbertson},
journal= {arXiv preprint arXiv:cond-mat/0208265},
year = {2009}
}
Comments
pdf-file, 8 figures, to be published in Phys. Rev. B