We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.
@article{arxiv.1009.3823,
title = {Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices},
author = {A. M. Gilbertson and M. Fearn and A. Kormányos and D. E. Read and C. J. Lambert and M. T. Emeny and T. Ashley and S. A. Solin and L. F. Cohen},
journal= {arXiv preprint arXiv:1009.3823},
year = {2010}
}