Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Lingjie Du; Tingxin Li; Wenkai Lou; Xingjun Wu; Xiaoxue Liu; Zhongdong Han; Chi Zhang; Gerard Sullivan; Amal Ikhlassi; Kai Chang; Rui-Rui Du

doi:10.1103/PhysRevLett.119.056803

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Mesoscale and Nanoscale Physics 2017-08-09 v3

Authors: Lingjie Du , Tingxin Li , Wenkai Lou , Xingjun Wu , Xiaoxue Liu , Zhongdong Han , Chi Zhang , Gerard Sullivan , Amal Ikhlassi , Kai Chang , Rui-Rui Du

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Abstract

We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.

Keywords

quantum spin Hall insulator edge states strained-layer InAs/GaInSb topological insulator time reversal symmetry

Cite

@article{arxiv.1608.06588,
  title  = {Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators},
  author = {Lingjie Du and Tingxin Li and Wenkai Lou and Xingjun Wu and Xiaoxue Liu and Zhongdong Han and Chi Zhang and Gerard Sullivan and Amal Ikhlassi and Kai Chang and Rui-Rui Du},
  journal= {arXiv preprint arXiv:1608.06588},
  year   = {2017}
}

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Phys. Rev. Lett. accepted version. 21 pages, 9 figures

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Abstract

Keywords

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