The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 K, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics.
@article{arxiv.2509.22185,
title = {Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics},
author = {Manuel Meyer and Jonas Baumbach and Sergey Krishtopenko and Adriana Wolf and Monika Emmerling and Sebastian Schmid and Martin Kamp and Benoit Jouault and Jean-Baptiste Rodriguez and Eric Tournie and Tobias Müller and Ronny Thomale and Gerald Bastard and Frederic Teppe and Fabian Hartmann and Sven Höfling},
journal= {arXiv preprint arXiv:2509.22185},
year = {2025}
}