Related papers: GaN-based Bipolar Cascade Lasers with 25nm wide Qu…
Energy spectrum of an electron confined by finite hard-wall potential in a cylinder quantum dot placed in weak (up to 100 kOe) homogeneous external magnetic field were calculated using the method of variation of vector potential. Electronic…
The optical properties of a concentric nanometer-sized spherical shell comprised of an (active) 3-level gain medium core and a surrounding plasmonic metal shell are investigated. Current research in optical metamaterials has demonstrated…
A laser with an active volume consisting of only a single quantum wire in the 1-dimensional (1-D) ground state is demonstrated. The single wire is formed quantum-mechanically at the T-intersection of a 14 nm Al_{0.07}Ga_{0.93}As quantum…
We theoretically investigate the optical functionality of a semiconducting quantum ring manipulated by two electrostatic lateral gates used to induce a double quantum well along the ring. The well parameters and corresponding inter-level…
Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be attained through the use of ZnO/Zn(1-x)MgxO core shell quantum…
Using the effective mass and rectangular potential approximations, the theory of electron dynamic conductivity is developed for the plane multilayer resonance tunnel structure placed into a constant electric field within the model of open…
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer…
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and…
We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between…
Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is…
Biexciton emission properties were studied in a single GaAs quantum well semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower…
Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates…
We use subpicosecond laser pulses to generate and monitor in real time collective oscillations of electrons in a modulation-doped GaAs quantum well. The observed frequencies match those of intersubband spin- and charge-density excitations.…
Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum…
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…
The use of colloidal quantum dots (CQDs) as a gain medium in infrared laser devices has been underpinned by the need for high pumping intensities, very short gain lifetimes and low gain coefficients.
We demonstrate topological defect lasers in a GaAs membrane with embedded InAs quantum dots. By introducing a disclination to a square-lattice of elliptical air holes, we obtain spatially confined optical resonances with high quality…
The GaAs/AlGaAs materials system is well suited to multi-bandgap applications such as the multiple quantum well solar cell. GaAs quantum wells are inserted in the undoped AlGaAs active region of a pin structure to extend the absorption…
Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed…
We present a microscopic theory of bipolar quantum well structures in the photovoltaic regime, based on the non-equilibrium Green's function formalism for a multi band tight binding Hamiltonian. The quantum kinetic equations for the single…