Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such states are in general challenging. In this work, by using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we directly probe the QWSs generated on the vacuum interface of a narrow band gap semiconductor Nb2SiTe4. Interestingly, the position and splitting of QWSs could be easily manipulated via potassium (K) dosage onto the sample surface. Our results suggest Nb2SiTe4 to be an intriguing semiconductor system to study and engineer the QWSs, which has great potential in device applications.
@article{arxiv.2204.11259,
title = {Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4},
author = {Jing Zhang and Zhilong Yang and Shuai Liu and Wei Xia and Tongshuai Zhu and Cheng Chen and Chengwei Wang and Meixiao Wang and Sung-Kwan Mo and Lexian Yang and Xufeng Kou and Yanfeng Guo and Haijun Zhang and Zhongkai Liu and Yulin Chen},
journal= {arXiv preprint arXiv:2204.11259},
year = {2022}
}