We demonstrate that quantum well states (QWS) of thin Pb films are highly perturbed within the proximity of intrinsic film defects. Scanning Tunneling Spectroscopy (STM/STS) measurements indicate that the energy of these states have a strong distance dependence within 4 nm of the defect with the strongest energetic fluctuations equaling up to 100 meV. These localized perturbations show large spatially-dependent asymmetries in the LDOS around the defect site for each corresponding quantum well state. These energetic fluctuations can be described by a simple model which accounts for fluctuations in the confinement potential induced by topographic changes.
@article{arxiv.0910.4466,
title = {Visualizing Quantum Well State Perturbations of Metallic Thin Films near Stacking Fault Defects},
author = {Alexander A. Khajetoorians and Gregory A. Fiete and Chih-Kang Shih},
journal= {arXiv preprint arXiv:0910.4466},
year = {2010}
}