Related papers: GaN-based Bipolar Cascade Lasers with 25nm wide Qu…
The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor…
We theoretically study the subband structure of single Si $\delta$-doped GaAs inserted in a quantum well and subject to an electric field applied along the growth direction. We use an efficient self-consistent procedure to solve…
We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than 10 nm) QWs with sufficiently high electron concentrations,…
We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of…
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have…
In this work, we demonstrate that in a regime of strong modulation, by generating pulses of the length of the order of a few cavity lifetimes (hundreds of ps), a broadband quantum cascade laser can be driven to lase on a bandwidth (250cm-1)…
A relationship between the maximum operating temperature of semiconductor lasers and their emission wavelength is conjectured. The conjecture is supported by a wide variety of existing experimental data for visible and infrared double…
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 {\Omega}-cm2) for various…
In order to achieve electrically pumped plasmon nano lasers, several structures, materials and methods, have been proposed recently. However, there is still a long way to find out a reliable appropriate on-chip plasmon source for commercial…
The smaller the size of a light-emitting microcavity, the more important it becomes to understand the effects of the cavity boundary on the optical mode profile. Conventional methods of laser physics, such as the paraxial approximation,…
Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium…
A low-cost single frequency laser emitting in the mid-infrared spectral region and dissipating minimal electrical power is a key ingredient for the next generation of portable gas sensors for high-volume applications involving chemical…
Computer simulations with Synopsys' Sentaurus TCAD are used to study the effect of the molar concentration of aluminum in the active and waveguide regions on the energy spectrum of carriers in Quantum Well (QW) and the optical spectral…
Quantum cascade lasers are of high interest in the scientific community due to unique applications utilizing the emission in mid-IR range. The possible designs of QCL are quite limited and require careful engineering to overcome some…
A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in…
Following the success of p-Ge hot-hole lasers, there is also potential for using other semiconductor materials, notably III-V's such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of…
Quantum cascade lasers made of nanowire axial heterostructures are proposed. The dissipative quantum dynamics of their carriers is theoretically investigated using non-equilibrium Green functions. Their transport and gain properties are…
We point out a novel manifestation of many-body correlations in the linear optical response of electrons confined in a quantum well. Namely, we demonstrate that along with conventional absorption peak at frequency close to intersubband…