In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed balance, leading to enhanced device performance. This mechanism is significantly stronger than Fano interference, and our results demonstrate that such a photocell exhibits increased photovoltage and photocurrent compared to its classical counterparts. Numerical simulations further show that the efficiency remains positive and saturates at a finite value for multi-quantum dot systems. The proposed quantum photocell represents a promising step towards harnessing quantum effects in practical energy-harvesting devices.
@article{arxiv.2012.13559,
title = {Quantum-enhanced photocell based on GaN quantum dots},
author = {Aditya Dev and Sumit Chaudhary and Jay Reshamiya and Abhishek Chakraborty and Vishvendra Singh Poonia},
journal= {arXiv preprint arXiv:2012.13559},
year = {2025}
}