Related papers: GaN-based Bipolar Cascade Lasers with 25nm wide Qu…

Quantum cascade lasers are recognized as propitious candidates for future terahertz optoelectronics. Here we demonstrate several definite advantages of quantum dot cascade structures over quantum well devices, which suffer fundamental…

Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…

There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission…

A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 \mu m is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain…

We examine the experimental requirements for realizing a high-gain Quantum free-electron laser (Quantum FEL). Beyond fundamental constraints on electron beam and undulator, we discuss optimized interaction geometries, include coherence…

Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…

We investigated the carrier and light trapping in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and…

We propose a quantum-dot version of the quantum-well cascade laser of Faist et al. [Science {\bf 264}, 553 (1994)]. The elimination of single phonon decays by the three-dimensional confinement implies a several order-of-magnitude reduction…

The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory…

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual non-radiative PDs…

Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to 5th order are clearly…

We present GaSb-based interband cascade lasers emitting at a center wavelength of 6.12 $\mu$m at 20$^\circ$C in continuous-wave operation up to a maximum operating temperature of 40$^\circ$C. Pulsed measurements based on broad area devices…

Terahertz quantum cascade lasers based on InGaAs wells and quaternary AlInGaAs barriers were measured in magnetic field. This study was carried out on a four quantum well active region design with photon energy of 14.3 meV processed both…

We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field…

In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best…

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by…

Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation…

This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two…

In this paper, we present a large signal and switching analysis for the Heterojunction Bipolar Transistor Laser (TL) to reveal its optical and electrical behavior under high current injection conditions. Utilizing appropriate models for…

A quantum cascade laser where the quantum wells in the active regions are replaced by quantum dots with their atom-like discrete energy levels is an interesting system to study novel features in optical spectroscopy. We study structures…