Analysis of low-threshold optically pumped III-nitride microdisk lasers
Applied Physics
2020-10-01 v1
Abstract
Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.
Cite
@article{arxiv.2009.05118,
title = {Analysis of low-threshold optically pumped III-nitride microdisk lasers},
author = {Farsane Tabataba-Vakili and Christelle Brimont and Blandine Alloing and Benjamin Damilano and Laetitia Doyennette and Thierry Guillet and Moustafa El Kurdi and Sébastien Chenot and Virginie Brändli and Eric Frayssinet and Jean-Yves Duboz and Fabrice Semond and Bruno Gayral and Philippe Boucaud},
journal= {arXiv preprint arXiv:2009.05118},
year = {2020}
}