Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
Abstract
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers.
Cite
@article{arxiv.2409.09752,
title = {Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K},
author = {Jie Zhou and Daniel Vincent and Sudip Acharya and Solomon Ojo and Alireza Abrand and Yang Liu and Jiarui Gong and Dong Liu and Samuel Haessly and Jianping Shen and Shining Xu and Yiran Li and Yi Lu and Hryhorii Stanchu and Luke Mawst and Bruce Claflin and Parsian K. Mohseni and Zhenqiang Ma and Shui-Qing Yu},
journal= {arXiv preprint arXiv:2409.09752},
year = {2024}
}
Comments
5 pages, 5 figures. Supplementary Information included