Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
Abstract
Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity surface-emitting lasers (VCSELs) have thresholds on the order of 100 \muA[1,2] but dissipate too much power to be practical for many applications, particularly optical interconnects[3]. Optically pumped photonic crystal (PC) nanocavity lasers represent the state of the art in low-threshold lasers[4,5]; however, in order to be practical, techniques to electrically pump these structures must be developed. Here we demonstrate a quantum dot photonic crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed - the lowest thresholds ever observed in any type of electrically pumped laser.
Keywords
Cite
@article{arxiv.1105.0236,
title = {Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser},
author = {Bryan Ellis and Marie Mayer and Gary Shambat and Tomas Sarmiento and James Harris and Eugene Haller and Jelena Vuckovic},
journal= {arXiv preprint arXiv:1105.0236},
year = {2011}
}