Related papers: Complementary junction field-effect transistor log…
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC…
Josephson junctions with iron pnictides open the way for fundamental experiments on superconductivity in these materials and their application in superconducting devices. Here, we present hybrid Josephson junctions with a…
Spin-spin exchange interactions between semiconductor spin qubits allow for fast single and two-qubit gates. During exchange, coupling of the qubits to a surrounding phonon bath may cause errors in the resulting gate. Here, the fidelities…
In spite of extended efforts, detecting thermoelectric effects in superconductors have proven to be a challenging task, due to the inherent superconducting particle-hole symmetry. Here we present a theoretical study of an experimentally…
We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the…
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…
We report on an industry-grade CMOS-compatible qubit fabrication approach using a CMOS pilot line, enabling a yield of functional devices reaching 92.8 %, with a resistance spread evaluated across the full wafer 200 mm diameter of 12.4 %…
All-optical integrated circuits for computing and information processing have been pursued for decades as a potential strategy to overcome the speed limitations intrinsic to electronics. However feasible on-chip integrated logic units and…
This work investigates the relationship between self-heating and the characteristic features observed in the current-voltage characteristics (IVCs) of superconductor-insulator-superconductor (SIS) junctions. Finite-element analysis is…
Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The…
The nature of the resistive transition for a current applied parallel to the magnetic field in high-Tc materials is investigated by numerical simulation on the three dimensional Josephson junction array model. It is shown by using finite…
The modulus spectra of organic field-effect transistors (OFETs) with electrode overlap and peripheral regions have been experimentally and theoretically investigated. The complex impedance of regioregular poly(3-hexylthiophene-2,5-diyl)…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…
The latest generation of transistors are nanoscale devices whose performance and reliability are limited by thermal noise in low-power applications. Therefore developing efficient methods to compute the voltage and current fluctuations in…
We present a groundbreaking demonstration of thermal modulation in a field-effect-controllable semiconductor-superconductor hybrid structure, wherein the heating mechanism is exclusively radiative. The architecture comprises two reservoirs…
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors.…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…