Related papers: Complementary junction field-effect transistor log…

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…

Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect…

The coherent tunnelling of Cooper pairs across Josephson junctions (JJs) generates a nonlinear inductance that is used extensively in quantum information processors based on superconducting circuits, from setting qubit transition…

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…

Sensor nodes and IoT systems require blocks that not only consume low power but also have good accuracy. Voltage reference generators are also considered important building blocks in sensor interface circuits. This paper presents a solution…

Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due…

In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature.…

Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper,…

High-Tc Type-II ceramic-superconductor at temperature T < Tc, under presence of magnetic-field B becomes non-superconducting if B exceeds a critical value Bc2. Thus at T < Tc, by application/absence of critical magnetic- field as a…

We describe here the first experimental realization of a heat interferometer, thermal counterpart of the well-known superconducting quantum interference device (SQUID). These findings demonstrate, on the first place, the existence of…

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that…

In comparison to the conventional complementary pull-up and pull-down logic structure, the pass transistor logic (PTL) family reduces the number of transistors required to perform logic functions, thereby reducing both area and power…

The simultaneous co-existence and gate-tuneability of the superconducting (SC), magnetic and topological orders in magic angle twisted bilayer graphene (MATBG) open up entirely new possibilities for the creation of complex hybrid Josephson…

Non-reciprocal charge transport in supercurrent diodes (SDs) polarized growing interest in the last few years for its potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid…

We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…

It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to…

Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…

Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…