Related papers: Complementary junction field-effect transistor log…
When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
In a normal-metal/insulator/superconductor (NIS) tunnel junction refrigerator, the normal-metal electrons are cooled and the dissipated power heats the superconducting electrode. This paper presents a review of the mechanisms by which heat…
This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to…
Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the…
Superconducting diodes, characterized by nonreciprocal supercurrent transport, offer transformative opportunities for ultra-low-power circuits. However, achieving reliable operation at temperatures above liquid nitrogen remains a major…
Josephson junctions (JJs) with Josephson energy $E_J \lesssim 1K$ are widely employed as non-linear elements in superconducting circuits for quantum computing, operating at milli-Kelvin temperatures. Here we experimentally study incoherent…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
Present semiconductor research is increasingly focusing on either higher speeds or higher linearity or both. Applications range from consumer, industrial, healthcare and military. Typically such circuits are fabricated in today's…
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using…
Most chip designers outsource the manufacturing of their integrated circuits (ICs) to external foundries due to the exorbitant cost and complexity of the process. This involvement of untrustworthy, external entities opens the door to major…
Existing concepts of reversible superconducting circuits as well as demonstrated adiabatic circuits require three-phase bias/clock signals generated by room temperature sources. A while ago, we suggested that a multi-phase bias/clock could…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown limit. To address this looming challenge, we demonstrate…
Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system…
Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…
The operation of CMOS Field Programmable Gate Arrays (FPGAs) at extremely cold environments as low as 4 K is demonstrated. Various FPGA and periphery hardware design techniques spanning from HDL design to improvements of peripheral…
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth…
Journal ref.: J. Phys.: Condens. Matter 25, 065602 (2013): We investigated the optical reflectivity of the heavy-fermion metal CeCu2Si2 in the energy range 3 meV - 30 eV for temperatures between 4K - 300K. The results for the charge…