Related papers: Short wavelength infrared avalanche photodetector …
In this work, three InAs/InAs$_{0.65}$Sb$_{0.35}$ superlattices with different periods were investigated using photoluminescence and photoreflectance measurements and their band structure was simulated using a 14 bulk-band kp model. The…
Free-running InGaAs/InP single-photon detectors (SPDs) based on negative-feedback avalanche diodes (NFADs) are the key components for applications requiring asynchronous single-photon detection in the near-infrared region. From the…
Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection…
Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented. The photodetector contains a semitransparent gate electrode and a…
Single photon avalanche diodes (SPADs) are the most commercially diffused solution for single-photon counting in quantum key distribution (QKD) applications. However, the secondary photon emission, arising from the avalanche of charge…
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation.…
A measurement system for determining the gain distributions of avalanche photodiodes (APDs) in a low gain range is presented. The system is based on an ultralow-noise charge--sensitive amplifier and detects the output carriers from an APD.…
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end,…
Optical intensity interferometry, developed in the 1950s, is a simple and inexpensive method for achieving angular resolutions on microarcsecond scales. Its low sensitivity has limited intensity interferometric observations to bright stars…
Sensitive and cost-effective Group-IV short-wave infrared (SWIR) photodetectors (PDs), compatible with complementary metal-oxide semiconductor (CMOS) processes, are crucial for various emerging applications. Here, we developed a black GeSn…
We have studied the performance of large area avalanche photodiodes (APDs) recently developed by Hamamatsu Photonics K.K, in high-resolution X-rays and Gamma-rays detections. We show that reach-through APD can be an excellent soft X-ray…
We present the design and simulation of a 30 $\mathrm{\mu m}$ thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 $\mathrm{\mu m}$ thick epitaxially grown gain layer enables controlled internal…
We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb type-II strained layer superlattice (T2SLs) using atomic resolution Z-contrast imaging and advanced image processing. Atomic column positions in InAs…
Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in…
Two-dimensional materials offering ultrafast photoresponse suffer from low intrinsic absorbance, especially in the mid-infrared wavelength range. Challenges in 2d material doping further complicate the creation of light-sensitive $p-n$…
A methodology to measure Near Infrared (NIR) scintillations in gaseous and liquid Ar, using Geiger-mode APDs (GAPDs) sensitive in the NIR and pulsed X-ray irradiation, is described. This study has been triggered by the development of…
Silicon sensors with high time resolution can help particle identification in the International Linear Collider (ILC). We are studying Low Gain Avalanche Diodes (LGADs) as a high timing resolution sensor. As a step to develop LGADs, we are…
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip…
Selective solar absorbers (SSAs) with high performance are the key to concentrated solar power systems. Optical metamaterials are emerging as a promising strategy to enhance selective photon absorption, however, the high-temperature…
Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and…