Related papers: Short wavelength infrared avalanche photodetector …
4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC…
We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of…
We report on the first use of laser ablation to make sub-millimeter, broad-band, anti-reflection coatings (ARC) based on sub-wavelength structures (SWS) on alumina and sapphire. We used a 515 nm laser to produce pyramid-shaped structures…
We used two novel approaches to produce sub-wavelength structure (SWS) anti-reflection coatings (ARC) on silicon for the millimeter and sub-millimeter (MSM) wave band: picosecond laser ablation and dicing with beveled saws. We produced…
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is…
Spectroscopy of Earth-like exoplanets and ultra-faint galaxies are priority science cases for the coming decades. Here, broadband source flux rates are measured in photons per square meter per hour, imposing extreme demands on detector…
Gated InGaAs/InP avalanche photodiodes are the most practical device for detection of telecom single photons arriving at regular intervals.Here, we report the development of a compact single-photon detector (SPD) module measured just 8.8cm…
We have integrated a commercial avalanche photodiode (APD) and the circuitry needed to operate it as a single-photon detector (SPD) onto a single PC-board. At temperatures accessible with Peltier coolers (~200-240K), the PCB-SPD achieves…
Spin-polarized electron emission from the first superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is complished using an InAlGaAs/GaAsP superlattice…
Silicon single-photon detectors (Si SPDs) play a crucial role in detecting single photons in the visible spectrum. For various applications, photon detection efficiency (PDE) is the most critical characteristic for effectively collecting…
Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
Single-photon avalanche diode (SPAD) arrays have transformed optical imaging by enabling photon-counting sensitivity, picosecond resolution, and high frame-rate operation. These capabilities, however, have remained confined to the visible…
Silicon avalanche photodiodes are the most sensitive photodetectors in the visible to near infrared region. However, when they are used for single photon detection in a Geiger mode, they are known to emit light on the controlled breakdown…
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs…
We present a novel structured light technique that uses Single Photon Avalanche Diode (SPAD) arrays to enable 3D scanning at high-frame rates and low-light levels. This technique, called "Single-Photon Structured Light", works by sensing…
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their…
We present a proof of concept for a spectrally selective near-infrared (NIR) and short-wavelength infrared (SWIR) photodetector based on nanopatterned multilayer graphene intercalated with FeCl$_3$ (NPMLG-FeCl$_3$), enabling large…
In order to build a new concept of photomultiplier based on silicon technology, design and characterization of 5x5 arrays of a new generation of single photon avalanche diodes (SPAD) manufactured by ST-Microelectronics have been performed.…
The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps. High collision rates and consequent large particle rates…