Related papers: Short wavelength infrared avalanche photodetector …
We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between -2 $^\circ$C and 25 $^\circ$C. The system can simultaneously measure up…
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection…
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic devices. These systems are quintessential to address…
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are…
Understanding the formation and long-timescale evolution of atmospheric plasmas produced by ultrashort, long wavelength IR (LWIR) pulses is an important but partially understood problem. Of particular interest are plasmas produced in air…
We propose a joint TDC and multi-time-gated imaging single-photon avalanche diode LiDAR sensor featuring a maximum detection range of 108m with a minimum depth resolution (least significant bit) of 2.93mm, fabricated in 110nm CMOS…
It is challenging to implement genuine free running single photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for…
Moir\'e superlattices comprised of stacked two-dimensional materials present a versatile platform for engineering and investigating new emergent quantum states of matter. At present, the vast majority of investigated systems have long…
Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our…
We propose a scheme for infrared single-photon detection based on two-photon absorption at room-temperature in Si avalanche photodiodes, where the detected photon's energy is lower than the bandgap and the energy difference is complemented…
We present a fully integrated InGaAs/InP negative feedback avalanche diode (NFAD) based free-running single-photon detector (SPD) designed for accurate lidar applications. A free-piston Stirling cooler is used to cool down the NFAD with a…
Photoelectric effect in a Ge-on-Si single-photon avalanche detector (SPAD) at a sub-photon energy in incident pulsed laser radiation is considered in frames of classical electrodynamics of continuous media. It is shown that the energy of…
We use a 1030 nm laser with 7 ps pulse duration and average power up to 100 W to ablate pyramid-shape subwavelength structures (SWS) on alumina and sapphire. The SWS give an effective and cryogenically robust anti-reflection coating in the…
For the SPECTRAP experiment at GSI, Germany, detectors with Single-Photon counting capability in the visible and near-infrared regime are required. For the wavelength region up to 1100 nm we investigate the performance of 2x2 mm^2 avalanche…
We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified…
We investigated the timing jitter of superconducting nanowire avalanche photodetectors (SNAPs, also referred to as cascade switching superconducting single photon detectors) based on 30-nm-wide nanowires. At bias currents (IB) near the…
Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) sensors have…
A single-photon avalanche detector (SPAD) for high-speed quantum-key generation has successfully been developed. It has the highest photon detection repetition frequency and the lowest dark count rate in the world, as a board-mountable…
The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting…
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated…