Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

Ryan E. Warburton; Sara Pellegrini; Lionel Tan; Jo Shien Ng; Andrey Krysa; Kris Groom; John P. R. David; Sergio Cova; Gerald S. Buller

Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

Instrumentation and Detectors 2007-05-23 v1

Authors: Ryan E. Warburton , Sara Pellegrini , Lionel Tan , Jo Shien Ng , Andrey Krysa , Kris Groom , John P. R. David , Sergio Cova , Gerald S. Buller

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Abstract

This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.

Keywords

InGaAs/InP single-photon avalanche diode Geiger-mode dark count rate detection efficiency afterpulsing timing jitter

Cite

@article{arxiv.physics/0605073,
  title  = {Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors},
  author = {Ryan E. Warburton and Sara Pellegrini and Lionel Tan and Jo Shien Ng and Andrey Krysa and Kris Groom and John P. R. David and Sergio Cova and Gerald S. Buller},
  journal= {arXiv preprint arXiv:physics/0605073},
  year   = {2007}
}

Comments

Presented at CLEO QELS, Long Beach, California (May 2006)

Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

Abstract

Keywords

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