Related papers: A Graphene Field-Effect Transistor Based Analogue …
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only…
Two graphene-based T-shaped multifunctional components for THz and Far-Infrared regions are proposed and analyzed. The first component can serve as a divider, a switch and a dynamically controllable filter. This T-junction presents a…
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of…
Graphene/hexagonal boron nitride (hBN) heterostructures represent a promising class of metal-insulator-semiconductor systems widely explored for multifunctional digital device applications. In this work, we demonstrate that graphene, when…
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit…
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…
The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at…
We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n…
Graphene field effect transistors (G-FETs) have appeared as suitable candidates for sensing charges and have thus attracted large interest for ion and chemical detections. In particular, their high sensitivity, chemical robustness,…
We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on…
We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We…
Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for…
Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly…
Phase modulation plays a crucial role in various terahertz applications, including biomedical imaging, high-rate communication, and radar detection. Existing terahertz phase shifters typically rely on tuning the resonant effect of…
We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not…
Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…