The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the semimetal nature of graphene has severely hindered its practical applications. Here we report a graphene/MoTe2 van der Waals (vdW) vertical transistor with V-shaped ambipolar field effect transfer characteristics to overcome this challenge. Investigations on temperature dependence of transport properties reveal that gate tunable asymmetric barriers of the devices are account for the ambipolar behaviors. Furthermore, to demonstrate the analog circuit applications of such vdW vertical transistors, we successfully realized output polarity controllable (OPC) amplifier and frequency doubler. These results enable vdW heterojunction based electronic devices to open up new possibilities for wide perspective in telecommunication field.
@article{arxiv.1801.01742,
title = {Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors},
author = {Chen Pan and Yajun Fu and Jiaxin Wang and Junwen Zeng and Guangxu Su and Mingsheng Long and Erfu Liu and Chenyu Wang and Anyuan Gao and Miao Wang and Yu Wang and Zhenlin Wang and Shi-Jun Liang and Ru Huang and Feng Miao},
journal= {arXiv preprint arXiv:1801.01742},
year = {2018}
}
Comments
To appear on Advanced Electronics Materials; 26 pages, 5 figures, 7 supplementary figures