Related papers: Optical absorption sensing with dual-spectrum sili…
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a…
Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that…
A high-sensitivity LED based photoacoustic NO$_2$ sensor is demonstrated. Sensitive photoacoustic gas sensors based on incoherent light sources are typically limited by background noise and drifts due to a strong signal generated by light…
A highly sensitive photodetection system with a detection limit of 1 photon/s was developed. This system uses a commercially available 200-mm-diameter silicon avalanche photodiode (APD) and an in-house-developed ultralow-noise readout…
The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
We fabricated and characterised nanowire superconducting single-photon detectors (SSPDs) made of 4 nm thick amorphous Mo$_x$Si$_{1-x}$ films. At 1.7 K the best devices exhibit a detection efficiency up to 18% at 1.2 um wavelength of…
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…
We demonstrate a large light absorptance (80%) in a nanometric layer of quantum dots in rods (QRs) with a thickness of 23 nm. This behavior is explained in terms of the coherent absorption by interference of the light incident at a certain…
Thermal silica is a common dielectric used in all silicon-photonic circuits. And bound hydroxyl ions (Si-OH) can provide a significant component of optical loss in this material on account of the wet nature of the thermal oxidation process.…
We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show…
We report the optical absorption characteristics and the photocurrent spectra for large-area molecular junctions containing different molecular structures and thicknesses. Through experimental assessment of the optical absorption of…
Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission…
A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch…
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…
Experimental apparatus and measurement technique are described for precision absorption measurements in sodium - noble gas mixtures. The absolute absorption coefficient is measured in the wavelength range from 425 nm to 760 nm with 2%…
This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer…
Enhanced optical absorption of molecules in the vicinity of metallic nanostructures is key to a number of surface-enhanced spectroscopies and of great general interest to the fields of plasmonics and nano-optics. Yet, experimental access to…
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and…
The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…