Related papers: Optical absorption sensing with dual-spectrum sili…
Point-like broadband ultrasound detection can significantly increase the resolution of ultrasonography and optoacoustic (photoacoustic) imaging, yet current ultrasound detectors cannot be miniaturised sufficiently. Piezoelectric transducers…
Optical absorption and reabsorption of light emitted from active regions in nitride laser diodes (LDs) have been shown to reduce the light extraction efficiency of these devices. It was proven that the presence of Si and Mg may considerably…
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
Single photon detection is important for a wide range of low-light applications, including quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A key challenge in these applications has been to integrate…
We propose a scheme for infrared single-photon detection based on two-photon absorption at room-temperature in Si avalanche photodiodes, where the detected photon's energy is lower than the bandgap and the energy difference is complemented…
Silicon nitride (SiN) is currently the most prominent platform for photonics at visible and near-IR wavelength bandwidth. However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains…
Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection…
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…
Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received…
Coherent interconversion of signals between optical and mechanical domains is enabled by optomechanical interactions. Extreme light-matter coupling produced by confining light to nanoscale mode volumes can then access single mid-infrared…
We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection…
In this paper, a plasmonic absorber consisting of a metal-dielectric-metal stack with a top layer of Sierpinski nanocarpet is theoretically investigated. Such compact absorber depicts broadband angle-independent behavior over a wide optical…
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…
Recently CMOS (complementary metal-oxide semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray…
Superconducting transition-edge sensors are renowned for their extraordinary photon sensitivity and energy resolution, finding applications spanning quantum information, astronomy, and nanophotonics. Here, we report the development of…
Organic photodetectors (OPDs) possess bright prospects in applications of medical imaging and wearable electronics due to the advantages such as low cost, good biocompatibility, and good flexibility. Photomultiplication OPDs (PM-OPDs)…
Achieving high quantum efficiency (QE) with low dark count is essential for highly sensitive photodetectors (PDs), including single photon avalanche detectors (SPADs). However, high QE requires a thicker absorber region, which leads to high…
The linear optical absorption spectra in neutral boron cluster B$_{6}$ and cationic B$_{6}^{+}$ are calculated using a first principles correlated electron approach. The geometries of several low-lying isomers of these clusters were…
Magnetometry with nitrogen-vacancy (NV) centers has so far been measured via emission of light from NV centers or via absorption at the singlet transition at 1042 nm. Here, we demonstrate a phenomenon of broadband optical absorption by the…
Photonic integrated circuit devices can be used as refractometric opto-fluidic sensors to detect the presence of analytes in solution at low concentrations. In this work, we investigate the refractive index sensitivity of silicon nitride…