Related papers: Optical absorption sensing with dual-spectrum sili…
In recent years, tremendous progress has been made on complementary metal-oxide-semiconductor (CMOS) sensors for applications as X-ray detectors. To shield the visible light in X-ray detection, a blocking filter of aluminum is commonly…
We present an ultrasensitive technique for probing transient optical changes in atomically thin molybdenum disulfide (MoS$_2$) layers integrated onto silicon nitride (Si$_3$N$_4$) ring resonators. The MoS$_2$ is illuminated by a femtosecond…
The mid-infrared (mid-IR) spectral region holds great promise for new laser-based sensing technologies, based on measuring strong mid-IR molecular absorption features. Practical applications have been limited to date, however, by current…
This paper introduces a thermal infrared detector utilizing a nano-optomechanical silicon nitride (SiN) resonator, equipped with a free-space impedance-matched (FSIM) absorber composed of a platinum (Pt) thin film, offering a broadband…
The photomolecular effect has been hypothesized to enhance evaporation of water at visible wavelengths. This study develops a measurement technique to investigate its presence and magnitude at the liquid-vapor interface of water. The…
Silicon single-photon detectors (SPDs) are the key devices for detecting single photons in the visible wavelength range. Here we present high detection efficiency silicon SPDs dedicated to the generation of multiphoton entanglement based on…
Recent breakthroughs in cryogenic silicon detector technology allow for the observation of single electron-hole pairs released via particle interactions within the target material. This implies sensitivity to energy depositions as low as…
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are…
Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18…
Dispersion characteristics of four types of superconducting nanowire single photon detectors, nano-cavity-array- (NCA-), nano-cavity-deflector-array- (NCDA-), nano-cavity-double-deflector-array- (NCDDA-) and nano-cavity-trench-array-…
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…
One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3…
By means of ab-initio calculations we investigate the optical properties of pure a-SiN$_x$ samples, with $x \in [0.4, 1.8]$, and samples embedding silicon nanoclusters (NCs) of diameter $0.5 \leq d \leq 1.0$ nm. In the pure samples the…
Electron stimulated desorption of cyclopentene from the Si(100)-2x1 surface is studied experimentally with cryogenic UHV STM and theoretically with transport, electronic structure, and dynamical calculations. Unexpectedly for a saturated…
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible…
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range…
Despite very efficient superconducting nanowire single-photon detectors (SNSPDs) reported recently, combining their other performance advantages such as high speed and ultra-low timing jitter in a single device still remains challenging. In…
Thin films are preferred for high photocurrent conversion efficiency, but strong photon absorption at photon energies below the bandgap (near and shortwave infrared) typically requires thicker semiconductor layers. To address this tradeoff,…
We have performed first principles electron-correlated calculations employing large basis sets to optimize the geometries, and to compute linear optical absorption spectra of various low-lying conformers of silicon hydrides:…
The optimal orientations are determined for polarized substrate side illumination of three superconducting nanowire single-photon detector (SNSPD) designs: (1) periodic niobium-nitride (NbN) stripes standing in air with dimensions according…