Related papers: Optical absorption sensing with dual-spectrum sili…
Future laser-interferometric gravitational wave detectors (GWDs) will potentially employ test mass mirrors from crystalline silicon and a laser wavelength of $1550\,\rm{nm}$, which corresponds to a photon energy below the silicon bandgap.…
We measured the single-photon detection efficiency of NbN superconducting single photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization…
The absorptance of p-polarized light in superconducting-nanowire single-photon detectors (SNSPDs) was improved by integrating (1) ~quarter-wavelength nano-optical cavity closed by a gold reflector (OC-SNSPD), (2) nano-cavity-array closed by…
The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and…
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation.…
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical…
The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one,…
Configurations capable of maximizing both absorptance and polarization contrast were determined for 1550 nm polarized light illumination of different plasmonic structure integrated superconducting nanowire single-photon detectors (SNSPDs)…
An estimated 26 million people in low- and middle-income countries are at risk of lead exposure and there is no safe threshold for lead ingestion. Radio assay methods are not easily accessible in regions at risk, therefore a low cost and…
Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\lambda \sim$ 8--0.28 $\mu$m) and used to improve the…
Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…
Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented. The photodetector contains a semitransparent gate electrode and a…
Crystalline silicon is currently being discussed as test-mass material for future generations of gravitational wave detectors that will operate at cryogenic temperatures. We present optical absorption measurements on a large-dimension…
Silicon single-photon detectors (Si SPDs) play a crucial role in detecting single photons in the visible spectrum. For various applications, photon detection efficiency (PDE) is the most critical characteristic for effectively collecting…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…