Related papers: Temperature Dependent Current Dispersion Study in …
We investigate low-temperature electronic properties of the nondimeric organic superconductor $\beta^{\prime\prime}$-(BEDT-TTF)$_4$[(H$_3$O)Ga(C$_2$O$_4$)$_3$]PhNO$_2$. By examining ultrasonic properties, charge disproportionation (CD)…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…
The scattering picture of electron transport in mesoscopic conductors shows that fluctuations of the current reveal additional information on the scattering mechanism not available through the conductance alone. The electronic fluctuations…
In this letter, we report on high performance depletion/enhancement (D/E)-mode beta-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) of 600/450 mA/mm, which are nearly one order of magnitude…
We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain…
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain…
We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the…
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between…
This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…
The electrical and Hall conductivities in a uniform magnetic field are evaluated for an interacting pion gas using the kinetic theory approach within the ambit of relaxation time approximation (RTA). The in-medium cross sections vis-a-vis…
Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at…
In this letter, fin-shape tri-gate $\beta$-Ga$_{2}$O$_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm$^{2}$ - a record high for any $\beta$-Ga$_{2}$O$_{3}$ transistor to date. A low-temperature undoped…
The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is revisited. The value of voltage appearing in the sample is found as the function of temperature (close to transition temperature…
Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal…
Self-heating effects of picosecond optoelectronic switches based on vertical high-voltage structures with p-n-junctions (VPSS) operating in a high-frequency mode were theoretically studied for the first time. It is shown that strong…
The effect of driving frequency in the range of 13.56 MHz to 73 MHz on electron energy distribution and electron heating modes in a 50 mTorr capacitively coupled argon plasma discharge is studied using 1D-3V particle-in-cell simulations.…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
Current fluctuations in pure lipid membranes have been shown to occur under the influence of transmembrane electric fields (electroporation) as well as a result from structural rearrangements of the lipid bilayer during phase transition…
High frequency operation of tunneling real-space transfer transistor (TRSTT) in the negative differential resistance (NDR) regime is assessed by calculating the device common source unity current gain frequency (fT) range with a small…
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…