Related papers: Temperature Dependent Current Dispersion Study in …
Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is related to the successive captures and emissions of electrons at…
The lattice thermal conductivity (LTC) of Ga$_2$O$_3$ is an important property due to the challenge in the thermal management of high-power devices. We develop machine-learned neuroevolution potentials for single-crystalline…
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the…
It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR)…
In a recent study, (Jain et al 2007 Phys. Rev. Lett. 99 190601), a symmetric exclusion process with time-dependent hopping rates was introduced. Using simulations and a perturbation theory, it was shown that if the hopping rates at two…
We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene…
The wide band gap semiconductor \b{eta}-Ga2O3 shows promise for applications in high-power and high-temperature electronics. The phonons of \b{eta}-Ga2O3 play a crucial role in determining its important material characteristics for these…
The rapid damping of slow magnetoacoustic waves in the solar corona has been extensively studied in previous years. Most studies suggest that thermal conduction is a dominant contributor to this damping, albeit with a few exceptions.…
We study the effect of dissipation on quantum phase fluctuations in d-wave superconductors. Dissipation, arising from a nonzero low frequency optical conductivity which has been measured in experiments below $T_c$, has two effects: (1) a…
We study the stochastic nature of switching current in hysteretic current-voltage characteristics of superconductor-graphene-superconductor (SGS) junctions. We find that the dispersion of the switching current distribution scales with…
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of electron-ion interaction suitable for the case of discrete…
Variable-range hopping (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
Recurrent and propagating intensity perturbations are frequently observed in extreme ultraviolet (EUV) channels along coronal fan loops above sunspots, and these perturbations are suggested to be slow magnetoacoustic waves. Numerous studies…
In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent…
The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not…
High-temperature superconductor (HTS) coated conductors (CC) are often wound into pancake coils with electrical insulation in-between the turns. The copper terminals are used for current injection and conduction cooling. An inherent…
$\beta$-Ga$_2$O$_3$ is a leading ultra-wide band gap semiconductor, but its performance depends on precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the…
The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of…
In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. Interface charge traps arising from the exposure to chemicals,…