Related papers: Temperature Dependent Current Dispersion Study in …
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…
We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and…
Direct observation of capture cross-section is challenging due to the need of extremely short filling pulses in the two-gate Deep-Level Transient Spectroscopy (DLTS). Simple estimation of cross-section can be done from DLTS and Admittance…
This paper reports on experimental measurements of the gas temperature in a dielectric barrier discharge reactor powered by a high voltage pulsed signal. It is shown that the thermal behavior of the reactor follows a first order model.…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…
Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are investigated, with a special focus on the modifications of…
We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in…
This study demonstrates a substantial enhancement of breakdown voltage in $\beta$-Ga$_2$O$_3$ Schottky diodes through an approach that combines fast neutron irradiation with controlled post-irradiation electro-thermal annealing. Devices…
The effect of changing the driving frequency on the plasma density and the electron dynamics in a capacitive radio-frequency argon plasma operated at low pressures of a few Pa is investigated by Particle in Cell/Monte Carlo Collisions…
The nonlinear response associated with the current dependence of the superconducting kinetic inductance was studied in capacitively shunted NbTiN microstrip transmission lines. It was found that the inductance per unit length of one…
Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first…
We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the…
The dephasing effect of metallic gates on electrons moving in one quasi--one--dimensional diffusive wires is analyzed. The incomplete screening in this geometry implies that the effect of the gate can be described, at high energies or…
Recent experiments have reported evidence of dominant electron-hole scattering in the electric conductivity of suspended bilayer graphene near charge neutrality. According to these experiments, plots of the electric conductivity as a…
Temperature and field dependent measurements of the electrical resistance of different natural graphite samples, suggest the existence of superconductivity at room temperature in some regions of the samples. To verify whether…
The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…