We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.
@article{arxiv.2012.04177,
title = {Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots},
author = {Motoya Shinozaki and Yui Muto and Takahito Kitada and Takashi Nakajima and Matthieu R. Delbecq and Jun Yoneda and Kenta Takeda and Akito Noiri and Takumi Ito and Arne Ludwig and Andreas D. Wieck and Seigo Tarucha and Tomohiro Otsuka},
journal= {arXiv preprint arXiv:2012.04177},
year = {2021}
}