Related papers: Temperature Dependent Current Dispersion Study in …
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs…
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film…
We calculate the frequency dispersion of the third cumulant of current in diffusive-metal contacts. The cumulant exhibits a dispersion at the inverse time of diffusion across the contact, which is typically much smaller than the inverse…
We have studied the diffusion of excess quasiparticles in a current-biased superconductor strip in proximity to a metallic trap junction. In particular, we have measured accurately the superconductor temperature at a near-gap injection…
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The…
We study energy flow between two resistors coupled by an arbitrary linear and lossless electric circuit. We show that the fluctuations of energy transferred between the resistors are determined by random scattering of photons on an…
Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.…
The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have…
This note analytically investigates non-reciprocal wave dispersion in locally resonant acoustic metamaterials. Dispersion relations associated with space-time varying modulations of inertial and stiffness parameters of the base material and…
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…
This paper presents an improved version of the previously proposed self-consistent drift-diffusion-reaction model correcting for non-physical behavior at longer time scales. To this end a novel boundary condition is employed that takes into…
In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at…
Hysteresis in organic electrochemical transistors (OECT) is a basic effect in which the measured current depends on the voltage sweep direction and velocity. This phenomenon has an important impact on different aspects of the application of…
Time-varying networks, consisting of lumped elements, such as resistors, capacitors, and inductors, actively modulated in time, have introduced a host of novel wave phenomena and witnessed a remarkable development during recent years. This…
In this report, the hysteresis behaviors of PEI:LiClO4 and PEG:LiClO4 electrolyte gate and back gate Graphene-on-SiO2 FET were analyzed by gate-voltage source-drain current modulation. It is shown that both the sweeping rate and the sweep…
The effect of proton irradiation in Ba(Fe0.93Co0.07)2As2 single crystals is reported. We analyze temperature dependence of current density and normalized flux relaxation rate in the framework of collective creep model. Glassy exponent and…
The effect of high-energy electron irradiation on the temperature dependences of the resistivity $\rho(T)$, fluctuation conductivity (FLC), and pseudogap (PG) $\Delta^{*}(T)$ of YBa$_2$Cu$_3$O$_7$--$\delta$ (YBCO) single crystals without…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…