Related papers: Temperature Dependent Current Dispersion Study in …
Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES…
Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using…
We report on charge transport and current fluctuations in a single bacteriorhodpsin protein in a wide range of applied voltages covering direct and injection tunnelling regimes. The satisfactory agreement between theory and available…
High current densities can induce the directional diffusion of atoms in metallic films. In YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO), this electromigration process selectively acts on oxygen atoms lying in the Cu-O chains, permitting to vary the…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
We investigate the resistive switching behaviour of $\mathrm{VO_2}$ microbridges under current bias as a function of temperature and thermal coupling with the heat bath. Upon increasing the electrical current bias, the formation of the…
We experimentally assess the capabilities of an active, open-loop technique for drag reduction in turbulent wall flows recently introduced by Quadrio et al. [J. Fluid Mech., v.627, 161, (2009)]. The technique consists in generating…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of…
${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…
We report the measurement of the third moment of current fluctuations in a short metallic wire at low temperature. The data are deduced from the statistics of voltage fluctuations across the conductor using a careful determination of…
We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron…
High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists…
In this paper, a transient delayed rising and fall time of $\beta$-Ga$_2$O$_3$ NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution…
We perform multiwavelength time-distance analysis of a fan loop system anchored in an isolated sunspot region AR 12553. The active region was observed by the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory. We measure…
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by…
Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechanisms. This work investigates the leakage currents through…
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all…
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…
We calculate the low-frequency current noise for AC biased mesoscopic chaotic cavities and diffusive wires. Contrary to what happens for the admittance, the frequency dispersion is not dominated by the electric response time (the "RC" time…