Related papers: Temperature Dependent Current Dispersion Study in …
Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance $G$ versus gate…
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be…
We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been…
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW…
Terahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the…
This article presents an investigation of a transient (30 {\mu}s - 5 ms) electrical discharge in metal vapour with low voltage (< 50 V) and current (< 1 A), drawn between two separating electrodes. Discharges of this type are rarely…
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…
We develop a time dependent random matrix theory describing the influence of a time-dependent perturbation on mesoscopic conductance fluctuations in open quantum dots. The effect of external field is taken into account to all orders of…
Experiments on the distributions of switching currents in Josephson junctions are sensitive probes of the mechanism by which a junction changes abruptly to a finite voltage state. At low temperatures data exhibit smooth and gradual…
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on…
We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…
We report on the switching current distributions in nano-hybrid Josephson junctions made of InAs semiconductor nanowires. Temperature dependence of the switching current distribution can be understood by motion of Josephson phase particle…
The discovery that a gate electrode suppresses the supercurrent in purely metallic systems is missing a complete physical understanding of the mechanisms at play. We here study the origin of this reduction in a Superconductor-Normal…
We investigate the influence of a dissipative environment which effectively comprises the effects of counterions and hydration shells, on the transport properties of short \DNA wires. Their electronic structure is captured by a…
Slow magnetoacoustic waves observed in the solar corona are used as seismological probes of plasma parameters. It has been shown that dispersion properties of such waves can vary significantly under the influence of the wave-induced thermal…
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in…
Electric-field-controlled charge transport is a key concept of modern computers, embodied namely in field effect transistors. The metallic gate voltage controls charge population, thus it is possible to define logical elements which are the…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…