Related papers: Temperature Dependent Current Dispersion Study in …
We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited…
Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The results of the simulation show that the trap centers are responsible…
Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These…
We calculate analytically the current statistics for a short diffusive wire between the normal reservoir and a short superconductor-normal metal-superconductor (SNS) junction, at arbitrary applied voltages and temperatures. The…
Charge density waves are a common occurrence in all families of high critical temperature superconducting cuprates. Although consistently observed in the underdoped region of the phase diagram and at relatively low temperatures, it is still…
We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to…
Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave…
We consider diffusive lattice gases on a ring and analyze the stability of their density profiles conditionally to a current deviation. Depending on the current, one observes a phase transition between a regime where the density remains…
Graphene field-effect transistors are widely used for development of biosensors. However, certain fundamental questions about details of their functioning are not fully understood yet. One of these questions is the presence of gate…
GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature…
Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
We propose to operate a locally-gated charge density wave as an electron pump. Applying an oscillating gate potential with frequency $f$ causes equally spaced plateaux in the sliding charge density wave current separated by $\Delta I=2eNf,$…
The temperature dependences of the electric-transport properties of the two-dimensional organic conductors beta"-(BEDT-TTF)2SF5CH2CF2SO3, beta"-(d8-BEDT-TTF)2SF5CH2CF2SO3, and beta"-(BEDT-TTF)2SF5CHFSO3 are measured by dc methods in and…
We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate…
The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…
Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity…
We have investigated the resistive response of high Tc thin films submitted to a high density of current. For this purpose, current pulses were applied into bridges made of Nd(1.15)Ba(1.85)Cu3O7 and Bi2Sr2CaCu2O8. By recording the time…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…