GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions.
@article{arxiv.1402.5598,
title = {Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain},
author = {Lianfeng Zhao and Zhen Tan and Jing Wang and Jun Xu},
journal= {arXiv preprint arXiv:1402.5598},
year = {2014}
}