We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been observed at source drain bias Vd = 0, along with anomalies at higher Vd likely induced by optical phonon scattering. For devices with low contact barriers, only the dI/dV dip at Vd = 0 is observed, and we find a well-fit logarithmic dependence of dI/dV on both the bias Vd and the temperature T. The logarithmic Vd dependence is explained with the hot electron effect and the logarithmic T dependence could be attributed to the weak-localization in two-dimensions.
@article{arxiv.1007.1755,
title = {Hot electron transport in suspended multilayer graphene},
author = {Sungbae Lee and Nelka Wijesinghe and Carlos Diaz-Pinto and Haibing Peng},
journal= {arXiv preprint arXiv:1007.1755},
year = {2015}
}