Related papers: Integrated Gallium Nitride Nonlinear Photonics
A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InGaN), thin-film, Schottky-barrier solar cells. The solar cells comprise a window, designed to reduce the reflection of…
This paper presents a design and implementation of a high-power Gallium Nitride (GaN)-based multilevel Hbridge inverter to excite wireless charging coils for the wireless power transfer of electric vehicles (EVs). Compared to the…
InGaN-based visible LEDs find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells…
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications…
Ga(In, Al)N alloys are used as an active layer or cladding layer in light emitting diodes and laser diodes. x-ray diffraction is extensively used to evaluate the crystalline quality, the chemical composition and the residual strain in…
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN…
High-energy-resolution GaN $\alpha$-particle detectors have significant potential for space radiation, nuclear instrumentation, and harsh-environment applications. However, existing GaN $\alpha$-particle detectors still face several key…
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…
The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN…
In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines…
The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by…
III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…
Gallium antimonide (GaSb) is a key material for near- and mid-infrared photonics, enabling high-performance laser architectures and detectors. Design and simulation of such devices depend on accurate optical material data, especially the…
Optical parametric oscillators (OPOs) have been widely used for decades as tunable, narrow linewidth, and coherent light sources for reaching long wavelengths and are attractive for applications such as quantum random number generation and…
We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex…
Integrated photonics has enabled signal synthesis, modulation and conversion using photonic integrated circuits (PIC). Many materials have been developed, among which silicon nitride (Si$_3$N$_4$) has emerged as a leading platform…
Microwave-frequency acoustic waves in solids have emerged as a versatile platform for both classical and quantum applications. While phononic integrated devices and circuits are being developed on various material platforms, an ideal…
Lithium niobate is an excellent photonic material with large ${\chi}^2$ and ${\chi}^3$ nonlinearities. Recent breakthroughs in nanofabrication technology have enabled ultralow-loss nanophotonic devices based on a…
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing…
Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction…