Related papers: Integrated Gallium Nitride Nonlinear Photonics
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…
Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical implementation is often limited by broad emission linewidths and…
Thin-film lithium niobate on insulator (LNOI) has emerged as a superior integrated-photonics platform for linear, nonlinear, and electro-optics. Here we combine quasi-phase-matching, dispersion engineering, and tight mode confinement to…
The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers…
A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga…
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased…
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high…
Nonlinear interactions between ultrashort optical waveforms and solids can be used to induce and steer electric current on a femtosecond (fs) timescale, holding promise for electronic signal processing at PHz frequencies [Nature 493, 70…
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which…
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new…
We develop a technique for realizing lithium niobate on insulator (LNOI) waveguides of a multi-centimeter-length with a propagation loss as low as 0.027 dB/cm. Our technique relies on patterning a chromium (Cr) thin film coated on the top…
Lithium niobate on insulator (LNOI) is an emerging photonic platform with great promises for future optical communications, nonlinear optics and microwave photonics. An important integrated photonic building block, active waveguide…
Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference…
Choosing the Indium Gallium Nitride (InGaN) ternary alloy for thin films solar cells might yield high benefits concerning efficiency and reliability, because its bandgap can be tuned through the Indium composition and radiations have little…
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometers or less, the luminous efficiency is constrained by the…
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we…
Lithium niobate (LN) is a promising material for future complex photonic-electronic circuits, with wide applications in fields like data communications, sensing, optical computation, and quantum optics. There was a great step toward LN…
An integrated silicon nitride resonator is proposed as an ultra-compact source of bright single-mode quadrature squeezed light at 850 nm. Optical properties of the device are investigated and tailored through numerical simulations, with…