Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by metalorganic chemical vapor deposition (MOCVD). Conductive atomic force microscopy (C-AFM) has been employed to probe vertical current injection through the graphene/SiC interface and to establish the uniformity of the intercalated areas. Scanning transmission electron microscopy (S/TEM) has been employed for atomic resolution imaging and spectroscopy. Discontinuity in the anticipated stacking sequence of graphitic-like GaN monolayers has been exposed and reasoned as a case of simultaneous formation of Ga-N and Ga-O bonds. The formation of Ga-O bonds acquires importance in instigating chemical-species-specific structural selectivity in confinement at atom-size scale.
@article{arxiv.2206.10247,
title = {2D graphitic-like gallium nitride and structural selectivity in confinement at graphene/SiC interface},
author = {Gianfranco Sfuncia and Giuseppe Nicotra and Filippo Giannazzo and Béla Pécz and Gueorgui Kostov Gueorguiev and Anelia Kakanakova-Georgieva},
journal= {arXiv preprint arXiv:2206.10247},
year = {2022}
}