Related papers: Integrated Gallium Nitride Nonlinear Photonics
We demonstrate third harmonic generation in plasmonic antennas made of highly doped germanium and designed to be resonant in the mid infrared. Owing to the near-field enhancement, the result is an ultrafast, sub-diffraction, coherent light…
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…
The lattice mismatch between AlGaN and AlN substrates limits the design and efficiency of UV LEDs, but it can be mitigated by the co-incorporation of boron. We employ hybrid density functional theory to investigate the thermodynamic,…
The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different…
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these…
On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…
Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light.…
We present a novel platform to construct high-performance nanophotonic devices in low refractive index dielectric films at telecoms wavelengths. The formation of horizontal slots by PECVD deposition of high index amorphous silicon provides…
Silicon nitride (SiN) is currently the most prominent platform for photonics at visible and near-IR wavelength bandwidth. However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains…
Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deploying midwave-infrared (MWIR) TPV in practical applications…
III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and…
Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation…
Applications of negative index materials (NIM) presently are severely limited by absorption. Next to improvements of metamaterial designs, it has been suggested that dense gases of atoms could form a NIM with negligible losses. In such…
Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through…
Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has…
This study presents an optimized hybrid design integrating a distributed Bragg reflector (DBR) and a TiO2 nanocylinder metasurface to enhance light extraction efficiency (LEE) and beam directionality(narrow divergence angle) in…
We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible…
Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities.…
Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency…