Related papers: Integrated Gallium Nitride Nonlinear Photonics
Strong nonlinear materials have been sought after for decades for applications in telecommunications, sensing, and quantum optics. Gallium-doped zinc oxide is a II-VI transparent conducting oxide that shows promising nonlinearities similar…
Integrated photonic devices operating via optical nonlinearities offer a powerful solution for all optical information processing, yielding processing speeds that are well beyond that of electronic processing as well as providing the added…
InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent.…
We describe the operation of two GaN-based diode lasers for the laser spectroscopy of gallium at 403 nm and 417 nm. Their use in an external cavity configuration enabled the investigation of absorption spectroscopy in a gallium hollow…
We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of GaN…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon…
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…
We utilize the recently demonstrated orders of magnitude enhancement of extremely nondegenerate two-photon absorption in direct-gap semiconductor photodiodes to perform scanned imaging of 3D structures using IR femtosecond illumination…
Gallium is a plasmonic material offering ultraviolet to near-infrared tunability, facile and scalable preparation, and good stability of nanoparticles. In our contribution, we experimentally demonstrate the link between the shape and size…
Adsorption of small ligands on semiconductor surfaces is a possible route to modify these surfaces so that they can be used in biosensing and optoelectronic devices. In this work we perform density-functional theory calculations of…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…
High-performance integrated broadband coherent light sources are essential for advanced applications in high-bandwidth data processing and chip-scale metrology, yet remain challenging. In this study, we demonstrate a monolithic Z-cut…
We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this…
Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…
We demonstrate a robust low-loss optical interface by tiling passive (i.e., without doping of active ions) thin film lithium niobate (TFLN) and active (i.e., doped with rare earth ions) TFLN substrates for monolithic integration of…
A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a triple mesa etch technique was used to fabricate efficient…
The integration of optomechanics and optoelectronics in a single device opens new possibilities for developing information technologies and exploring fundamental phenomena. Gallium arsenide (GaAs) is a well-known material that can bridge…
While silicon has dominated solid-state electronics for more than four decades, a variety of new materials have been introduced into photonics to expand the accessible wavelength range and to improve the performance of photonic devices. For…