Related papers: Melting and crystallization in layered film system…
We studied the temperature dependence of the diagonal double-stripe spin order in one and two unit cell thick layers of FeTe grown on the topological insulator Bi_2Te_3 via spin-polarized scanning tunneling microscopy. The spin order…
The application of amorphous chalcogenide alloys as data-storage media relies on their ability to undergo an extremely fast (10-100 ns) crystallisation once heated at sufficiently high temperature. However, the peculiar features that make…
The phase transition between water and ice is ubiquitous and one of the most important phenomena in nature. Here, we performed time-resolved x-ray scattering experiments capturing the melting and recrystallization dynamics of ice. The…
We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and…
The thermal properties are one of the key parameters to control phase purity and microstructure of polycrystalline materials. The melting point of the iron-based BaFe2As2 superconductor (Ba122), which foresees high-field applications,…
Glass-forming liquids have only a modest tendency to crystallize and hence their dynamics can be studied even below the melting temperature. The relaxation dynamics of most of these liquids shows at a temperature $T_c$, somewhat above the…
Biaxially textured FeSe1-xTex films have been realized on Fe-buffered MgO substrates by pulsed laser deposition. Similar to the Fe/BaFe2As2 bilayers, the crystalline quality of FeSe1-xTex films exhibit a sharp out-of-plane and in-plane…
We proposed an alternative model to criterion of Lindemann for melting that explains the melting of thin films on the basis of a molecular zipper-like mechanism. Using this model, a unique criterion for melting is obtained. We compared the…
Dielectric relaxation spectroscopy (1 Hz - 20 GHz) has been performed on supercooled glass-formers from the temperature of glass transition (T_g) up to that of melting. Precise measurements particularly in the frequencies of MHz-order have…
The electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic…
We describe thermal melting of the two-dimensional vortex lattice in a rotating superfluid by generalizing the Halperin and Nelson theory of dislocation-mediated melting. and derive a melting temperature proportional to the renormalized…
Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were…
We study the structure and melting of a classical bilayer system of dipoles, in a setup where the dipoles are oriented perpendicular to the planes of the layers and the density of dipoles is the same in each layer. Due to the anisotropic…
Here we study the kinetics of liquefaction and solidification of thin bismuth films grown on the insulating substrate by the pulsed laser deposited (PLD) and molecular beam epitaxy (MBE) and investigated by in situ electron and X-ray…
We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over…
MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C.…
Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the…
Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 {\deg}C) is…
When a liquid is cooled below its melting temperature it usually crystallizes. However, if the quenching rate is fast enough, it is possible that the system remains in a disordered state, progressively losing its fluidity upon further…
Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The…