High temperature electronic behavior of La0.8Sr0.2MnO3 thin film

Guotai Tan; S. Dai; P. Duan; H. B. Lu; K. Xie; Y. L. Zhou; Z. H. Chen

High temperature electronic behavior of La0.8Sr0.2MnO3 thin film

Strongly Correlated Electrons 2007-05-23 v1

Authors: Guotai Tan , S. Dai , P. Duan , H. B. Lu , K. Xie , Y. L. Zhou , Z. H. Chen

Abstract

The electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic state of the thin film underwent a discontinuous variation between 350 K and 450 K, indicating that the metal-semiconductor transition was probably a discontinuous phase transition. At high temperature (450 to 1000 K), both the binding energies of the atomic core level and valence-band of the film shifted up with increasing the temperature, while their line-widths became narrower, which were different from that observed at low temperature. These phenomena are attributed to the crystal lattice expansion and related Jahn-Teller distortion varying with temperature.

Keywords

thin film electronic structure metal-semiconductor transition XPS Jahn-Teller distortion

Cite

@article{arxiv.cond-mat/0301385,
  title  = {High temperature electronic behavior of La0.8Sr0.2MnO3 thin film},
  author = {Guotai Tan and S. Dai and P. Duan and H. B. Lu and K. Xie and Y. L. Zhou and Z. H. Chen},
  journal= {arXiv preprint arXiv:cond-mat/0301385},
  year   = {2007}
}

Comments

10 pages, 4 figures. submitted to Phys. Rev. B

High temperature electronic behavior of La0.8Sr0.2MnO3 thin film

Abstract

Keywords

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