Related papers: High temperature electronic behavior of La0.8Sr0.2…
We report a Raman scattering investigation of KTa1-xNbxO3 (x = 0.35, 0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 K to 720 K is similar to the structural phase…
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a…
Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology…
We present angle-resolved photoemission spectroscopy results for thin films of the three-dimensional manganese perovskite La$_{1-x}$Sr$_{x}$MnO$_{3}$. We show that the transition temperature ($T_c$) from the paramagnetic insulating to…
The structural evolution of a polydomain ferroelectric Pb(Zr0.2Ti0.8)O3 film was studied by temperature dependent X-ray diffraction. Two critical temperatures were evidenced: T*=740K, corresponding to a change in the domain structure…
Variable temperature scanning tunneling microscopy/spectroscopy studies on (110) oriented epitaxial thin films of La$_{0.350}$Pr$_{0.275}$Ca$_{0.375}$MnO$_3$ are reported in the temperature range of 77 to 340 K. The films, grown on lattice…
The optical properties of Nd$_{0.7}$Sr$_{0.3}$MnO$_3$ thin films have been studied from 5 meV to 25 meV and from 0.25 eV to 3 eV, at temperatures from 15 K to 300 K and magnetic fields up to 8.9 T. A large transfer of spectral weight from…
The temperature dependence of the electrical resistivity of the heterostructures consisting of single crystalline LaMnO$_3$ samples with different crystallographic orientations covered by the epitaxial ferroelectric…
Epitaxial thin films of stoichiometric ${\rm LaMnO_3}$ were grown on ${\rm SrTiO_3(110)}$ substrates using the pulsed laser deposition technique. From the high resolution x-ray diffraction measurements, the lattice parameters were…
Thin Ba0.5Sr0.5TiO3 (BST) films on p-type Si (100) using The Chemical Solution Deposition (CSD) method. X-ray diffraction (XRD), Scanning electron microscopy (SEM), C-V meter analysis measurement were employed to characterise the films. The…
Thin films and heterostructures of hexagonal manganites as promising multiferroic materials have attracted a considerable interest recently. We report structural transformations of high quality epitaxial h-TMO/YSZ(111) films, analyzed by…
Temperature evolution of dielectric response, atomic structure, and lattice dynamics in thin film of sodium niobate in the epitaxial NaNbO$_3$/SrRuO$_3$/(001)MgO heterostructure is studied by dielectric measurements, x-ray diffraction, and…
NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO…
Epitaxial Ba0.5Sr0.5TiO3 thin films grown on the (001) LaAlO3 substrates with the ferroelectric transition of about 250K have been investigated by TEM and off-axis electron holography. Cross-sectional TEM observations show that the…
We report electrical resistivity measurements on a high-quality Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ thin film ($x=0.4$) under pressure. The superconducting transition temperature (=39.95 K) of the optimally-doped thin film shows a dome shape…
Thin films of the correlated transition-metal oxide LaNiO$_3$ undergo a metal-insulator transition when their thickness is reduced to a few unit cells. Here, we use angle-resolved photoemission spectroscopy to study the evolution of the…
Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn…
Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells…
Temperature dependent electrical resistivity, crystal structure and heat capacity measurements reveal a resistivity drop and metal to semiconductor transition corresponding to first order structural phase transition near 400 K in Ca3Co4O9.…
Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…