Related papers: p-Diamond, Si, GaN and InGaAs TeraFETs
An electrically tunable terahertz (THz) plasmonic device is designed and fabricated using liquid metals (eutectic gallium indium EGaIn) and shape memory alloy wires (Flexinol). The liquid metal is injected into the voids of a poly(dimethyl)…
We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when…
Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz.…
Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…
Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. In this paper we present a detailed performance comparison…
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and…
Terahertz (THz) radiation has uses from security to medicine; however, sensitive room-temperature detection of THz is notoriously difficult. The hot-electron photothermoelectric effect in graphene is a promising detection mechanism:…
The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide…
Terahertz bands enable ultra-broadband wireless communications but require compact, low-cost, and efficient transceiver modules. Conventional implementations based on metallic waveguides or silicon lenses suffer from high loss, bulkiness,…
Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction…
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and high-frequency performance while significantly reducing…
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement…
We study transmission of the terahertz radiation through a two-dimensional electron gas with a concentration controlled by grating gate electrodes. Voltage applied to these electrodes creates a lateral plasmonic crystal with a gate-tunable…
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin…
The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely…
Different terrestrial terahertz applications would benefit from large-format arrays, operating in compact and inexpensive cryocoolers at liquid helium temperature with sensitivity, limited by the 300-K background radiation only. A…
Terahertz (THz) technology shows great potential in 6G communications and imaging, but faces challenges related to detector sensitivity, noise, and cryogenic operation. Here, we integrate interferometric enhancement of absorption (IEA) from…
Terahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the…
Imaging systems operating in the terahertz part of the electromagnetic spectrum are in great demand because of the distinct characteristics of terahertz waves in penetrating many optically-opaque materials and providing unique spectral…
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…