Related papers: p-Diamond, Si, GaN and InGaAs TeraFETs
We achieve high detectivity terahertz sensing using a silicon nitride nanomechanical resonator functionalized with a metasurface absorber. High performances are achieved by striking a fine balance between the frequency stability of the…
This paper proposes an experiment to easily detect radiative heat transfer in the microwave range. Following an idea given by Pendry more than a decade ago [1], we show that a 3D array of tungsten 2micron radius wires with a 1 cm period…
Recent reports highlight the potential of tin-based perovskite semiconductors for high-performance p-type field-effect transistors (FETs) with mobilities exceeding 20 cm2V-1s-1. However, these high mobilities--often obtained via two-probe…
We propose an on-chip CMOS compatible graphene plasmonic photodetector based on the photo-thermoelectric effect (PTE) that occurs across an entire homogeneous graphene channel. The proposed photodetector incorporates the long-range…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…
Plasmonic near-field transducers (NFTs) play a key role in administering nanoscale heating for a number of applications ranging from medical devices to next generation data processing technology. We present a novel multi-scale approach,…
This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduced to the sub-micron range, passivation by high-k…
High quality factor resonances are extremely promising for designing ultra-sensitive refractive index label-free sensors since it allows intense interaction between electromagnetic waves and the analyte material. Metamaterial and plasmonic…
Transient field-resolved spectroscopy enables studies of ultrafast dynamics in molecules, nanostructures, or solids with sub-cycle resolution, but previous work has so far concentrated on extracting the dielectric response at frequencies…
We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant…
Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the…
The terahertz (THz) spectral domain offers a myriad of applications spanning chemical spectroscopy, medicine, security and imaging[1]. It has also recently become a playground for fundamental studies of light-matter interactions [2-6]. THz…
Surface Plasmon Resonance sensors are a well-established class of sensors which includes a very large variety of materials and detection schemes. However, the development of portable devices is still challenging as due to the intrinsic…
Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is…
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We observed that an InP HEMT 0.3-14GHz LNA at 2K,…
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a…
We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The…
Graphene plasmons hold immense potential for terahertz (THz) detector application due to their fascinating interactions between radiation and matter. However, it has remained challenging to excite and manipulate graphene plasmons within…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…