Related papers: p-Diamond, Si, GaN and InGaAs TeraFETs

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which…

Dielectric resonators are key components for many microwave and millimetre wave applications, including high-Q filters and frequency-determining elements for precision frequency synthesis. These often depend on the quality of the dielectric…

We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical…

Diamond properties down to the quantum-size region are still poorly understood. High-pressure high-temperature (HPHT) synthesis from chloroadamantane molecules allows precise control of nanodiamond size. Thermal stability and optical…

Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieving high drive currents,…

Substitutional transition metal (TM) point defects have recently been controllably introduced in two-dimensional (2D) transition metal dichalcogenides. We identify quantum defect candidates through a first-principles materials discovery…

Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\Delta}ID/ID, for a given {\Delta}pH, however, is…

Planar metamaterials have been recently proposed for thin dielectric film sensing in the terahertz frequency range. Although the thickness of the dielectric film can be very small compared with the wavelength, the required area of sensed…

We propose and evaluate the characteristics of the terahertz (THz) detectors based on perforated graphene layers (PGLs). The PGL structures constitute the interdigital in-plane arrays of the graphene microribbons (GMRs) connected by the…

We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We…

The current (voltage) responsivity of the superlattice-based diode detectors in the terahertz frequency band which includes the region of the polar optical phonon frequencies has been analyzed theoretically. Within the framework of the…

We introduce a novel scheme for efficient manipulation and detection of terahertz (THz) radiation. Our work consists of two parts; with a focus on proving the concept of our novel scheme, and the exploitation of graphene's peculiar…

Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits the confinement of plasma waves in a field-effect transistor (FET), whereby a…

We theoretically investigate the application of topological plasmon polaritons (TPPs) to temperature sensing for the first time. Based on an analogy of the topological edge states in the Su-Schrieffer-Heeger model, TPPs are realized in a…

I report on the experimental observation of DC instability and self-amplification through stimulated emission of 0.2 and 1.63 THz radiation using InGaAs/GaAs HEMT operating in the deep saturation regime at room temperature. I demonstrate…

We show that plasma excitations in nanoscale field-effect transistor structures with periodic alternation of gated and ungated regions (plasmonic crystals) differ fundamentally from conventional plasmons in isolated gated or ungated…

We present the combination of a broadband terahertz time-domain spectroscopy system (0.1 - 8 THz), a diamond anvil cell capable of generating high pressure conditions of up to 10 GPa and a cryostat reaching temperatures as low as 10 K. This…

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…

We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with ~75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature…

In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme…